发明名称 NOVEL RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a photoresist composition suitable for high performance applications such as high resolution sub-half micron and sub-quarter micron features. <P>SOLUTION: The photoresist composition comprises a resin comprising a moiety selected from formulae, wherein each R<SB>2</SB>is the same or different non-hydrogen substituent, and each n is an integer of 0-4. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011081340(A) 申请公布日期 2011.04.21
申请号 JP20100115691 申请日期 2010.05.19
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 XU CHENG-BAI;ZAMPINI ANTHONY
分类号 G03F7/039;C08F20/28;H01L21/027 主分类号 G03F7/039
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