| 摘要 |
A method for forming a metal line of a nonvolatile memory device is provided to selectively isolate a contact plug and a metal line which intersect each other although one interlayer insulation film uses. A first insulation film is formed on a semiconductor substrate(102) including a first junction region and a second junction region. A first contact hole and a second contact hole are formed on the first insulation film, and expose the first junction region and the second junction region. A first contact plug(110s) and a second contact plug(110d) are formed inside the first contact hole and the second contact hole. A recess is formed by etching a part of the second contact plug. A second insulation film is formed in order to fill up the recess. A third insulation film is formed on the semiconductor substrate including the first insulation film and the second insulation film. A first trench and a second trench are formed by etching the third insulation film, and expose the first contact plug and the second contact plug. A first metal line and a second metal line are formed inside the first trench and the second trench. |
