| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To eliminate a dark current difference between an effective pixel region and an OB part, and to suppress a parasitic MOS effect in the OB part. <P>SOLUTION: The solid-state imaging element includes a plurality of photodiodes (PDs) formed in a front surface part of a semiconductor substrate, an antireflective film 54 covering the front surface part, and a shade film 55 dividing a region of the front surface part formed with the PDs into an effective pixel region of a center part and a circumferential OB part and covering areas other than individual light reception surfaces of the PDs 42a in the effective pixel region. Parts other than the light reception surfaces of the PDs 42a in the effective pixel region out of the antireflective film 54 in the effective pixel region are removed, the antireflective film 54 on regions corresponding to right reception surfaces of the PDs 42b of the OB part are removed, and a first insulating layer (x) formed between the shade film 55 covering the OB part and the regions corresponding to the light reception parts is formed thicker than a second insulating layer (y) excluding the antireflective film 54 between the light reception surfaces of the PDs 42a in the effective pixel region and an opening end of the shade film 55 facing the light reception surfaces. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
