| 摘要 |
PROBLEM TO BE SOLVED: To suppress increase in element area, as much as possible, to prevent electrical field concentration at a terminal end of a high withstand voltage device effectively, and to suppress decrease in a withstand voltage. SOLUTION: In a structure where an n<SP>+</SP>-type cathode region 6 is arranged in the center portion and p<SP>+</SP>-type anode regions 7 are arranged on both sides of the n<SP>+</SP>-type cathode region; an electrode pattern 11 is formed on a semiconductor element portion 8; and the electrode pattern 11 is connected to an electric-potential control portion 9, located on a side surface of the semiconductor element portion 8. Then, a voltage drop by an internal resistance of the electrode pattern 11 is utilized to gradually reduce the electric potential of the surface of the semiconductor element portion 8, in a direction from the n<SP>+-</SP>type cathode region 6 of the high-potential side toward the p<SP>+</SP>-type anode region 7 of the low-potential side. In addition, on the side surface of the semiconductor element portion 8, a voltage drop by the internal resistance of the electrode pattern 11 is utilized, to make the electric potential of each electric-potential control portion 9 reduce in a stepwise fashion, in a direction from the n<SP>+</SP>-type cathode region 6 toward the p<SP>+</SP>-type anode region 7. COPYRIGHT: (C)2011,JPO&INPIT |
