发明名称 VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus and a vapor deposition method, capable of reducing the time of film formation and continuously forming a film. SOLUTION: The vapor deposition apparatus 1 includes a vacuum chamber 2, an index table 30 (rotating bed), a plurality of vapor sources 31, a rotating mechanism 32, and first and second heating mechanisms 33 and 34. The rotating bed is rotated by the rotating mechanism so as to sequentially move the plurality of vapor sources on the rotating bed to a preheating position P1 and a film forming position P2. The first heating mechanism heats a vapor deposition material housed in the vapor source belonging to the film forming position. The second heating mechanism heats a vapor deposition material housed in the vapor source belonging to the preheating position. Each vapor source is moved from the preheating position to the film forming position. The film forming position is adjacently arranged on a downstream side of the preheating position, observed along the rotating direction of the rotating bed. The vapor material heated in the preheating position is moved to the film forming position while the temperature is kept, which shortens the time required for vaporization. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011080136(A) 申请公布日期 2011.04.21
申请号 JP20090235757 申请日期 2009.10.09
申请人 ULVAC JAPAN LTD 发明人 AOSHIRO MAKOTO;MIKAMI SHUN
分类号 C23C14/24 主分类号 C23C14/24
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