| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for efficiently producing an aluminum nitride single crystal having good crystallinity on a target deposition part. SOLUTION: The method for producing an aluminum nitride single crystal comprises heating a raw material gas generation source arranged in a raw material supply part to a raw material gas generation temperature T<SB>1</SB>so as to generate aluminum gas or aluminum oxide gas being a raw material gas, then supplying the raw material gas and nitrogen gas to the deposition part where a substrate for growing the aluminum nitride single crystal is arranged, and producing the aluminum nitride single crystal on the substrate. In the method, the aluminum nitride single crystal is grown under such conditions that the deposition starting temperature T<SB>2</SB>of the single crystal aluminum nitride from the raw material gas and nitrogen gas, the raw material gas generation temperature T<SB>1</SB>, and the temperature T<SB>S</SB>of the deposition part satisfy following relations: T<SB>1</SB>≤T<SB>S</SB><T<SB>2</SB>. COPYRIGHT: (C)2011,JPO&INPIT
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