发明名称 |
METHOD FOR PREPARING A SEMICONDUCTOR |
摘要 |
The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlxGa1-xN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a co-doping step with a codopant capable of modifying the structure of the valency band. The invention also concerns a semiconductor as well as its use in electronics or optoelectronics. The invention further concerns a device as well as a diode using such a semiconductor.
|
申请公布号 |
US2011089445(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20070281332 |
申请日期 |
2007.03.06 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DAUDIN BRUNO;MARIETTE HENRI |
分类号 |
H01L33/30;H01L21/20;H01L21/22;H01L29/20;H01L29/205;H01L33/32 |
主分类号 |
H01L33/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|