| 摘要 |
<p>Disclosed is a nitride semiconductor device having high pressure resistance and a reduced leak current. Specifically disclosed is a nitride semiconductor device (30) characterized by comprising a nitride semiconductor laminate, an anode (36) and cathodes (37 and 38), wherein the nitride semiconductor laminate is a laminate composed of a channel layer (33) and a wide band gap layer (35) laminated in this order, the anode (36) is connected to the wide band gap layer (35) through a schottky barrier junction, the cathodes (37 and 38) are connected to the channel layer (33), the channel layer (33) is an n+-type nitride semiconductor layer, and the band gap of the wide band gap layer (35) is wider than that of the channel layer (33).</p> |
