发明名称 BI-GE-O SINTERED SPUTTERING TARGET, MANUFACTURING METHOD THEREFOR, AND OPTICAL RECORDING MEDIUM
摘要 <p>Provided are: a sintered target comprising bismuth (Bi), germanium (Ge), and oxygen (O); a manufacturing method therefor; and an optical recording medium. Said Bi-Ge-O sintered sputtering target is characterized in that the relationship between the number of bismuth atoms and the number of germanium atoms satisfies the relation 0.57 &lt; (Bi/(Bi+Ge)) 12GeO20, Bi4Ge3O12, and GeO2. The provided target does not crack upon sputtering, generates few particulates, allows fabrication of stably high-quality thin films, and makes it possible to obtain an optical recording medium with no errors in recorded bits.</p>
申请公布号 WO2011046033(A1) 申请公布日期 2011.04.21
申请号 WO2010JP67338 申请日期 2010.10.04
申请人 JX NIPPON MINING & METALS CORPORATION;NARA ATSUSHI 发明人 NARA ATSUSHI
分类号 C23C14/34;C04B35/00;G11B7/26 主分类号 C23C14/34
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