THE METHOD FOR FORMING QUANTUM DOTS USING PATTERNED STRAINED LAYER AND QUANTUM DOT SEMICONDUCTOR DEVICE BY THEREOF
摘要
PURPOSE: A method for manufacturing a quantum dot using a patterned strained layer and a quantum dot semiconductor device made by the same are provided to form the quantum dot with high uniformity and density by using the patterned strained layer as a seed layer. CONSTITUTION: A patterned strained layer(530a) and a patterned first capping layer(550a) are formed on a substrate(510) by patterning the first capping layer and the strained layer using an etching mask. A second capping layer(570) is formed after the first capping layer and the strained layer are patterned with a lattice format. A quantum dot forming material is formed on the upper side of the second capping layer. A plurality of self-formed quantum dots(590a) are formed on the upper side of the second capping layer.
申请公布号
KR20110041221(A)
申请公布日期
2011.04.21
申请号
KR20090098292
申请日期
2009.10.15
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
SONG, JUNG HO;KIM, KI SOO;CHOI, BYUNG SEOK;KWON, O KYUN;OH, DAE KON