| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a mask blank having a reduced front-surface reflectance and a reduced back-surface reflectance and adaptable to further miniaturization, in light transmission lithography using ArF exposure light. <P>SOLUTION: The mask blank is obtained by forming, on a substrate 11 made of synthetic quartz, a light-shielding layer 12 comprising TaN (with 84.0 atom% of Ta and 16.0 atom% of N in terms of a film composition ratio) to a film thickness of 43 nm by DC magnetron sputtering in a mixture gas atmosphere of xenon (Xe) and nitrogen (N) using Ta as a sputtering target. Then the substrate 11 with the light-shielding layer 12 formed thereon is placed in a single-wafer RF sputtering device; and a front-surface antireflection layer 13 comprising TaSiO (with 27.4 atom% of Ta, 5.9 atom% of Si and 66.7 atom% of O in terms of a film composition ratio) is formed to a film thickness of 12 nm by RF magnetron sputtering in an argon (Ar) gas atmosphere using a TaSiO mixture sintered target. <P>COPYRIGHT: (C)2011,JPO&INPIT |
