发明名称 PLASMA REACTOR FOR ABATING HAZARDOUS MATERIALS AND DRIVING METHOD THEREOF
摘要 The present invention provides a plasma reactor for abating hazardous materials generated in a low-pressure process during a process of manufacturing a display or a semiconductor. A plasma reactor for abating hazardous materials according to an exemplary embodiment of the present invention includes: a first ground electrode and a second ground electrode disposed at a distance from each other; a dielectric fixed between the first ground electrode and the second ground electrode; and at least one driving electrode disposed on an outer surface of the dielectric, being spaced apart from the first ground electrode and the second ground electrode and connected to an AC power supply unit to receive a driving voltage therefrom.
申请公布号 US2011089017(A1) 申请公布日期 2011.04.21
申请号 US20100905227 申请日期 2010.10.15
申请人 HUR MIN;CHA MIN-SUK;SONG YOUNG-HOON;LEE JAE-OK;LEE DAE-HOON;KIM KWAN-TAE 发明人 HUR MIN;CHA MIN-SUK;SONG YOUNG-HOON;LEE JAE-OK;LEE DAE-HOON;KIM KWAN-TAE
分类号 B01J19/12;B01J19/08 主分类号 B01J19/12
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