GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser device capable of reducing instability of laser resonance caused by a return light. SOLUTION: A first end surface 27 of the group III nitride semiconductor laser device 11 includes a plurality of cleavage flaws 49 extending from a scribe line in a c-axis direction in a cleavage surface of the end surface. The c-axis inclines against first and second surfaces 13a and 13b of a laser structure 13. The cleavage flaws 49 pass through an area 48 different from a light emission area 47 of the first end surface 27, and the cleavage flows can be made pass near the light emission area 47 by utilizing the inclination of the c-axis. The area 48 includes a band-like shape extending in the c-axis direction in conformity to the length of the scribe line 45a. Roughness of the cleavage flaws 49 reflects at least part of a light LEX which goes to the first end surface 27 from the outside of the group III nitride semiconductor laser device 11 to reduce an amount of light incident from the outside to the group III nitride semiconductor laser device. COPYRIGHT: (C)2011,JPO&INPIT