发明名称 |
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD |
摘要 |
The object to provide a semiconductor device comprising a highly-integrated SGT-based CMOS inverter circuit is achieved by forming an inverter which comprises: a first transistor including; an first island-shaped semiconductor layer; a first gate insulating film; a gate electrode; a first first-conductive-type high-concentration semiconductor layer arranged above the first island-shaped semiconductor layer; and a second first-conductive-type high-concentration semiconductor layer arranged below the first island-shaped semiconductor layer, and a second transistor including; a second gate insulating film surrounding a part of the periphery of the gate electrode; a second semiconductor layer in contact with a part of the periphery of the second gate insulating film; a first second-conductive-type high-concentration semiconductor layer arranged above the second semiconductor layer; and a second second-conductive-type high-concentration semiconductor layer arranged below the second semiconductor layer.
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申请公布号 |
US2011089496(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20100854564 |
申请日期 |
2010.08.11 |
申请人 |
UNISANTIS ELECTRONICS (JAPAN) LTD. |
发明人 |
MASUOKA FUJIO;NAKAMURA HIROKI |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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