发明名称 METHOD OF ANNEALING CADMIUM TELLURIDE PHOTOVOLTAIC DEVICE
摘要 <p>A method of manufacturing a photovoltaic device may include forming a cadmium zinc sulfide layer on a substrate; depositing a cadmium telluride layer on the cadmium zinc sulfide layer; contacting a cadmium chloride to the cadmium telluride layer; and annealing one or more layers, where the one or more layers includes at least the cadmium telluride layer.</p>
申请公布号 WO2011046930(A1) 申请公布日期 2011.04.21
申请号 WO2010US52318 申请日期 2010.10.12
申请人 FIRST SOLAR, INC.;GLOECKLER, MARKUS;POWELL, RICK, C. 发明人 GLOECKLER, MARKUS;POWELL, RICK, C.
分类号 H01L31/00;H01L31/068 主分类号 H01L31/00
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