METHOD OF ANNEALING CADMIUM TELLURIDE PHOTOVOLTAIC DEVICE
摘要
<p>A method of manufacturing a photovoltaic device may include forming a cadmium zinc sulfide layer on a substrate; depositing a cadmium telluride layer on the cadmium zinc sulfide layer; contacting a cadmium chloride to the cadmium telluride layer; and annealing one or more layers, where the one or more layers includes at least the cadmium telluride layer.</p>
申请公布号
WO2011046930(A1)
申请公布日期
2011.04.21
申请号
WO2010US52318
申请日期
2010.10.12
申请人
FIRST SOLAR, INC.;GLOECKLER, MARKUS;POWELL, RICK, C.