THIN-FILM TRANSISTOR, PROCESS FOR PRODUCTION OF SAME, AND DISPLAY DEVICE EQUIPPED WITH SAME

摘要

Disclosed are: a thin-film transistor which can be operated at a high speed; a process for producing the thin-film transistor; and a display device equipped with the thin-film transistor. Specifically disclosed is a bottom-gate-type thin-film transistor comprising a gate electrode, a gate insulating film, an oxide semiconductor film and a protective insulating film laminated in this order on a substrate, wherein the planar shape of the protective insulating film completely or substantially corresponds to that of the gate electrode. Preferably, the thin-film transistor additionally comprises a source/drain electrode which is connected to a channel formed in the oxide semiconductor film, the source/drain electrode and the oxide semiconductor film are formed using an identical semiconductor layer, and the source/drain electrode is formed by reducing a part of the semiconductor layer.