FORMING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device includes steps: providing a substrate (101); forming a source area and a drain area on the substrate, a dummy gate structure on the substrate located between the source area and the drain area, and a gate dielectric layer forming between the substrate and the dummy gate structure (102); annealing the source area and the drain area (103); removing the dummy gate structure to form an opening (104); planting ions from the opening to the substrate to form a steep retrograde dopant well (105); laser annealing to the opening to activate the dopant (106); and depositing to form a metal gate on the gate dielectric layer (107).