NITRIDE SEMICONDUCTOR LASER DEVICE

摘要

Disclosed is a nitride semiconductor laser device which is provided with: an n-GaN substrate (101) having a stripe-shaped protruding structure; and an n-AlGaN clad layer (102), which is formed on the n-GaN substrate (101), and is provided with AlGaN. The n-AlGaN clad layer (102) includes: a layer (102a) having a constant composition ratio, said layer being in contact with the center portion on the upper surface of the protruding structure; and a first Al composition ratio changed layer (102b), which is formed in contact with an angle extending from the upper surface of the protruding structure, and has an Al composition ratio higher than that of the layer (102a).