发明名称 |
Verfahren zum Herstellen einer Schutzstruktur |
摘要 |
A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, producing a layer at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone having doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone having doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first and second regions of the semiconductor layer. A common connection device is formed for the first and second dopant zones. |
申请公布号 |
DE102007024355(B4) |
申请公布日期 |
2011.04.21 |
申请号 |
DE20071024355 |
申请日期 |
2007.05.24 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
AHRENS, CARSTEN;SCHMENN, ANDRE;SOJKA, DAMIAN |
分类号 |
H01L23/60;H01L21/74;H01L29/868 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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