| 摘要 |
<p>PURPOSE: A photo-resist composition is provided to form photo-resist patterns with the superior line-width roughness and obtain the superior resolution and the adhesive property of photo-resist. CONSTITUTION: A photo-resist composition includes polymer, a resin, and an acid generator. The polymer includes a unit structure derived from a compound represented by chemical formula 1. The resin includes acid-labile group and is soluble in an alkaline aqueous solution by the action of acid. In the chemical formula 1, R1 is hydrogen or methyl group. R2 is C6 to C12 of substituted aromatic hydrocarbon. R3 is cyano group or C1 to C12 of substituted hydrocarbon with one or more hetero elements. A1 represents a single bond, -(CH_2)_g-CO-O-*, or -(CH_2)_h-OCO-(CH_2)_i-CO-O-*. g, h, and I are respectively the integer of 1 to 6. * is the bonding position of nitrogen element.</p> |
