| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ITO sputtering target which can suppress production of cracks, arcing and nodules upon sputtering, and to provide an efficient production method therefor. <P>SOLUTION: In the ITO sputtering target, 30 pieces of regions of 20 μm×20 μm are optionally selected from among a structural image obtained by observation at a magnifying power of 1,000 times using a scanning electron microscope, the mass compositions (mass%) of In and Sn in each region are analyzed by a wavelength dispersive electron probe microanalyzer to obtain an Sn/(In+Sn) ratio, and the average composition x as the average of 30 pieces of SnO<SB>2</SB>compositions obtained by conversion from the above ratio and the standard deviation σ of the 30 pieces of the SnO<SB>2</SB>compositions satisfy the relation of 2≤x/σ≤6. The ITO sputtering target has high compressive strength, produces little cracks even when sputtering is performed under high power application, and can suppress the production of the arcing and nodules as well. <P>COPYRIGHT: (C)2011,JPO&INPIT |
