发明名称 |
Microfabrication of Carbon-based Devices Such as Gate-Controlled Graphene Devices |
摘要 |
A graphene device includes a graphene layer and a back gate electrode connected to apply a global electrical bias to the graphene from a first surface of the graphene. At least two graphene device electrodes are each connected to a corresponding and distinct region of the graphene at a second graphene surface. A dielectric layer blanket-coats the second graphene surface and the device electrodes. At least one top gate electrode is disposed on the dielectric layer and extends over a distinct one of the device electrodes and at least a portion of a corresponding graphene region. Each top gate electrode is connected to apply an electrical charge carrier bias to the graphene region over which that top gate electrode extends to produce a selected charge carrier type in that graphene region. Such a carbon structure can be exposed to a beam of electrons to compensate for extrinsic doping of the carbon.
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申请公布号 |
US2011089404(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20090936768 |
申请日期 |
2009.04.23 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE |
发明人 |
MARCUS CHARLES M.;WILLIAMS JAMES R.;CHURCHILL HUGH OLEN HILL |
分类号 |
H01L29/12;H01L21/36 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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