发明名称 |
STRUCTURE AND METHOD FOR MANUFACTURING ASYMMETRIC DEVICES |
摘要 |
A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures.
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申请公布号 |
US2011089499(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20090581924 |
申请日期 |
2009.10.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NAYFEH HASAN M.;BRYANT ANDRES;KUMAR ARVIND;ROVEDO NIVO;ROBISON ROBERT R. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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