发明名称 |
NORMALIZED HYDROGEN SENSING AND METHODS OF FABRICATING A NORMALIZED HYDROGEN SENSOR |
摘要 |
<p>HEMT-based hydrogen sensors are provided. In accordance with one embodiment, a normalized sensor is provided having a control HEMT-based sensor connected in series to an active HEMT-based sensor. The control and the active sensor include functionalized gate regions. The gate functionalization for both the control and the active sensor is the same material that selectively absorbs hydrogen gas. The control sensor further includes a protective layer to inhibit its gate functionalization from being exposed to hydrogen. In one embodiment, the final metal for the contacts of the sensors is used as the protective layer. In other embodiments, the protective layer is a dielectric or polymer.</p> |
申请公布号 |
WO2011046858(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
WO2010US52148 |
申请日期 |
2010.10.11 |
申请人 |
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC.;REN, FAN;PEARTON, STEPHEN, JOHN |
发明人 |
REN, FAN;PEARTON, STEPHEN, JOHN |
分类号 |
G01N27/414;G01N27/26;H01L29/778 |
主分类号 |
G01N27/414 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|