| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for a manufacturing semiconductor device easily using a high density carbon nanotube in wiring. SOLUTION: A via hole 9 is formed at an insulating film 7, and a catalyst 12 is formed in the via hole 9 and on the insulating film 7. The catalyst 12 on the insulating film 7 is inactivated, thereby allowing the carbon nanotube to grow in the via hole 9 with the catalyst 12 in the via hole 9 as a start point. COPYRIGHT: (C)2011,JPO&INPIT |
