| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment apparatus, wherein an injected impurity is successfully activated while suppressing cracking of a substrate. SOLUTION: A two-stage light irradiation heat treatment comprises first-stage light irradiation of a semiconductor wafer and second-stage light irradiation of the semiconductor wafer. In the first stage, a total time of light irradiation is≤40 milliseconds and an average value is equal to a light emission output L1. In the following second stage, an output waveform has such a peak that a maximum attained output reaches a light emission output L2 which is larger than the average light emission output L1 of the first stage and a maximum value of a light emission output of the first stage. The light emission output L2 of the peak of the second stage is 1.5 to 3 times as large as the average light emission output L1 of the first stage, and a temperature raising width from an attained temperature T2 of a semiconductor wafer surface by the light irradiation in the first stage to an attained temperature T3 by the light irradiation in the second stage is 100 to 300°C. COPYRIGHT: (C)2011,JPO&INPIT
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