发明名称 METHOD FOR MANUFACTURING TRANSISTOR EVALUATION DEVICE, AND TRANSISTOR EVALUATION DEVICE
摘要 <p>A method for manufacturing a transistor evaluation device is provided with: a step for preparing a mother board (300) including a first circuit formation region (301A) in which a first matrix circuit for liquid crystal display can be formed and a second circuit formation region (301B) in which a second matrix circuit for liquid crystal display can be formed, the second circuit formation region having a yield lower than that of the first circuit formation region (301A); a step for forming the first matrix circuit in the first circuit formation region (301A); a step for forming a transistor evaluation circuit in the second circuit formation region (301B); and a step for cutting out the transistor evaluation circuit by cutting the mother board (300).</p>
申请公布号 WO2011046012(A1) 申请公布日期 2011.04.21
申请号 WO2010JP66687 申请日期 2010.09.27
申请人 SHARP KABUSHIKI KAISHA;SHOHJI, ATSUSHI 发明人 SHOHJI, ATSUSHI
分类号 H01L29/786;G02F1/13;G02F1/1368;G09F9/00;G09F9/30;H01L21/336;H01L21/66 主分类号 H01L29/786
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