发明名称 |
METHOD FOR MANUFACTURING TRANSISTOR EVALUATION DEVICE, AND TRANSISTOR EVALUATION DEVICE |
摘要 |
<p>A method for manufacturing a transistor evaluation device is provided with: a step for preparing a mother board (300) including a first circuit formation region (301A) in which a first matrix circuit for liquid crystal display can be formed and a second circuit formation region (301B) in which a second matrix circuit for liquid crystal display can be formed, the second circuit formation region having a yield lower than that of the first circuit formation region (301A); a step for forming the first matrix circuit in the first circuit formation region (301A); a step for forming a transistor evaluation circuit in the second circuit formation region (301B); and a step for cutting out the transistor evaluation circuit by cutting the mother board (300).</p> |
申请公布号 |
WO2011046012(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
WO2010JP66687 |
申请日期 |
2010.09.27 |
申请人 |
SHARP KABUSHIKI KAISHA;SHOHJI, ATSUSHI |
发明人 |
SHOHJI, ATSUSHI |
分类号 |
H01L29/786;G02F1/13;G02F1/1368;G09F9/00;G09F9/30;H01L21/336;H01L21/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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