SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to prevent an interlayer delamination on a channel region by improving adhesion between reflective materials and oxide under a semiconductor layer. CONSTITUTION: A light emitting structure(135) includes a plurality of compound semiconductor layers. An electrode(115) is formed on the compound semiconductor layer. A reflection layer(150) is formed under the compound semiconductor layer. A conductive support member(170) is formed under the reflection layer. A channel layer(140) is formed around the compound semiconductor layer.