| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the efficiency of voltage conversion of a semiconductor device and miniaturize a semiconductor device package. <P>SOLUTION: A non-isolated DC-DC converter including a circuit in which a power MOS-FET Q1 for a high-side switch and a power MOS-FET Q2 for a low-side switch are connected in series, wherein the power MOS-FET Q1 for a high-side switch and driver circuits 3a and 3b for driving the power MOS-FETs Q1 and Q2 are formed on a semiconductor chip 5a, the power MOS-FET Q2 for a low-side switch is formed on another semiconductor chip 5b, and the two semiconductor chips 5a and 5b are contained in the same package 6a. <P>COPYRIGHT: (C)2011,JPO&INPIT |
