发明名称 SEMICONDUCTOR INTEGRATED DEVICE AND METHOD FOR DESIGNING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an LSI which has high ESD (Electro Static Discharge) tolerance and a method for designing the same. <P>SOLUTION: An LSI chip includes a plurality of power system circuit units, a first circuit unit 101 to which electric power is supplied from first power supply wiring 106, and first ground wiring 109 to which the first circuit unit is coupled. Moreover, the LSI chip includes a second circuit unit 102 to which electric power is supplied from second power supply wiring 113, and second ground wiring 116 coupled to the second circuit unit. The first circuit unit includes a first interface circuit unit 104, and the second circuit unit includes a second interface circuit unit 111 configured to perform inputting or outputting of a signal to and from the first interface circuit unit. The first ground wiring is coupled to the second ground wiring through a protection circuit 117, and the second interface circuit unit is placed in the vicinity of the first interface circuit unit. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011082544(A) 申请公布日期 2011.04.21
申请号 JP20100259998 申请日期 2010.11.22
申请人 RENESAS ELECTRONICS CORP 发明人 HIRATA MORIHISA
分类号 H01L27/04;H01L21/82;H01L21/822;H01L23/528;H01L23/60;H01L25/04;H01L25/18;H01L27/02;H03K19/00;H03K19/003;H03L5/00 主分类号 H01L27/04
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