| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device using a dual damascene structure with high reliability, and a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes a first insulating film formed on a semiconductor substrate, a contact formed at the first insulating film, a second insulating film formed on the first insulating film and having a dielectric constant lower than the first insulating film, and wiring formed at a second insulating film and electrically connected to the contact, wherein a first barrier metal is formed on a contact bottom surface and the side face of the wiring, and a second barrier metal is formed on a contact side face and the first barrier metal. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
