| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device obtaining abnormality in breakdown strength caused by failure of a guard ring, or the like, without increasing a chip area. SOLUTION: The semiconductor device includes: a second conductive type active region; and a second conductive type guard ring which surrounds the active region with a predetermined interval between them, on the surface of a first conductive type semiconductor base body. It includes: a guard ring corner part electrode which measures potential of a guard ring at least one point of the guard ring corner parts; a guard ring electrode corner part in which the guard ring corner part electrode is formed at the corner part of the guard ring; and a guard ring electrode corresponding active region corner part of the corner part of active region corresponding to the guard ring electrode corner part. The guard ring electrode corresponding active region corner part is formed according to the shape of the guard ring electrode corner part formed by the guard ring corner part electrode wider than its width. COPYRIGHT: (C)2011,JPO&INPIT |
