| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that achieves void-free embedding in a process of directly plating on an Ru barrier. SOLUTION: The method of manufacturing the semiconductor device 100 includes a process (a) of forming a recess 102 in an insulating film 101 on a semiconductor substrate, a process (b) of forming a barrier metal film 103 covering a side wall and a bottom part of the recess 102, a process (c) of forming a first conductive film 104 which is conformal along a surface of the barrier metal film 103 through first electric field plating processing, and a process (d) of forming a second conductive film 105 within the recess through second electric field plating processing after the process (c). COPYRIGHT: (C)2011,JPO&INPIT
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