| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which a filmy burr portion remaining adjacent to a channel region of an RC transistor is completely removed while a height of the channel region is adjusted to be in a desired range. SOLUTION: The method of manufacturing a semiconductor device includes: a first step of forming a groove and a projecting part 39 on one surface of a semiconductor substrate 1 and then forming an element isolation insulating film for filling the groove, wherein the projecting part is surrounded by the groove and has a sidewall surface, a part of which is an inclined surface; a second step of dry etching the one surface of the semiconductor substrate 1 using the element isolation insulating film as a part of a mask to form a recessed part 27 in the projecting part 39 and forming a thin part 41 functioning as a channel region 4 between the recessed part 27 and the element isolation insulating film; and a third step of adjusting a height of the thin part 41 by wet etching. COPYRIGHT: (C)2011,JPO&INPIT
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