发明名称 |
GROWTH OF MONOCRYSTALLINE GeN ON A SUBSTRATE |
摘要 |
The present invention relates a method for forming a monocrystalline GeN layer (4) on a substrate (1) comprising at least a Ge surface (3). The method comprises, while heating the substrate (1) to a temperature between 550° C. and 940° C., exposing the substrate (1) to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer (4) on a substrate (1). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface (3).
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申请公布号 |
US2011089520(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20070309940 |
申请日期 |
2007.07.20 |
申请人 |
LIETEN RUBEN;DEGROOTE STEFAN;BORGHS GUSTAAF |
发明人 |
LIETEN RUBEN;DEGROOTE STEFAN;BORGHS GUSTAAF |
分类号 |
H01L29/47;H01L21/20;H01L29/12;H01L29/20 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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