发明名称 |
MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.
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申请公布号 |
US2011092075(A1) |
申请公布日期 |
2011.04.21 |
申请号 |
US20100903384 |
申请日期 |
2010.10.13 |
申请人 |
SUZUKI KUNIHIKO;MITANI SHINICHI |
发明人 |
SUZUKI KUNIHIKO;MITANI SHINICHI |
分类号 |
H01L21/46 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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