| 摘要 |
PURPOSE: A CMOS image sensor is provided to increase the current amplification in a pixel by obtaining a high efficiency signal through a low voltage. CONSTITUTION: A photoelectric conversion element(410) receives light from the outside and generates photocharge. A transmission transistor(420) transmits the generated photocharge to a floating diffusion node according to a transmission control signal. A reset transistor(430) reset the floating diffusion node according to a reset control signal supplied to a gate terminal. A signal transmission circuit(440) outputs an electric signal according to the voltage of the floating diffusion node in response to a selection signal. A pixel pull-up amp circuit(450) changes an output signal of the signal transmission circuit into a voltage inverse proportion to the voltage of the floating diffusion node.
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