| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a coating liquid for forming an insulating film in which shrinkage in a baking step in steam is small and crack of a silica film and detachment thereof from a semiconductor substrate is hard to occur, an insulating film using the same, and a method for producing a compound used for the same. <P>SOLUTION: The coating liquid for forming an insulating film includes: inorganic polysilazane having a ratio of a peak area of 4.5-5.3 ppm derived from an SiH<SB>1</SB>group and an SiH<SB>2</SB>group to a peak area of 4.3-4.5 ppm derived from an SiH<SB>3</SB>group of 4.2-50 in<SP>1</SP>H-NMR spectrum; and an organic solvent. The insulating film is obtained by using the coating liquid for forming an insulating film. The inorganic polysilazane is obtained by reacting a dihalosilane compound, a trihalosilane compound, or a mixture thereof with a base to form adducts, and subsequently by reacting ammonia with a solution or a dispersion of the adducts at -50 to -1°C. <P>COPYRIGHT: (C)2011,JPO&INPIT |
