THROUGH SILICON VIA(TSV) WIRE BOND ARCHITECTURE

摘要

PROBLEM TO BE SOLVED: To provide a through silicon via (TSV) wire bonding structure.

SOLUTION: The through silicon via (TSV) structure for an integrated circuit (IC) is provided. The IC includes a substrate having a top surface and a bottom surface, and a circuit formed on the top surface; a plurality of bonding pads formed along a periphery of the bottom surface; and a back metal layer (BML), formed on the bottom surface and electrically connected to second sub-set bonding pads in a plurality of bonding pads. First sub-set bonding pads in a plurality of bonding pads are electrically connected to the circuit on the top surface via the through silicon via (TSV). The BML distributes an electrical signal provided by the second sub-set bonding pads.

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