发明名称 |
Halbleiterfilme aus einer quartären oder höheren Legierung der Gruppe I-III-VI |
摘要 |
This invention relates to a method for producing group IB-IIIA-VIA quaternary or higher alloy semiconductor films wherein the method comprises the steps of (i) providing a metal film comprising a mixture of group IB and group IIIA metals; (ii) heat treating the metal film in the presence of a source of a first group VIA element (said first group VIA element hereinafter being referred to as VIA1) under conditions to form a first film comprising a mixture of at least one binary alloy selected from the group consisting of a group IB-VIA1 alloy and a group IIIA-VIA1 alloy and at least one group IB-IIIA-VIA 1 ternary alloy; (iii) optionally heat treating the first film in the presence of a source of a second group VIA element (said second group VI element hereinafter being referred to as VIA2) under conditions to convert the first film into a second film comprising at least one alloy selected from the group consisting of a group IB-VIA1-VIA2 alloy and a group IIIA-VIA1-VIA2 alloy, and the at least one group IB-III-VIA1 ternary alloy of step (ii); (iv) heat treating either the first film or second film to form a group IB-IIIA-VIA quaternary or higher alloy semiconductor film. |
申请公布号 |
DE202004021800(U1) |
申请公布日期 |
2011.04.21 |
申请号 |
DE20042021800U |
申请日期 |
2004.08.13 |
申请人 |
UNIVERSITY OF JOHANNESBURG |
发明人 |
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分类号 |
H01L21/36;C30B29/46;C30B29/52;H01L31/032;H01L31/06;H01L31/18 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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