发明名称 PATTERNED INTEGRATED CIRCUIT AND METHOD OF PRODUCTION THEREOF
摘要 The present invention relates generally to the field of integrated electronics. More specifically, the present invention relates to patterned graphene-like carbon-based integrated circuits and methods of production thereof. Methods of photo-, electron-beam projection, extreme-ultraviolet, and imprint lithographic patterning and also several thermal patterning methods are disclosed in the present invention.
申请公布号 EP2311078(A1) 申请公布日期 2011.04.20
申请号 EP20090771083 申请日期 2009.06.26
申请人 CARBEN SEMICON LIMITED 发明人 DUVALL, STEVEN, GRANT;KHOKHLOV, PAVEL;LAZAREV, PAVEL, I.
分类号 H01L21/461;H01L29/16;H01L51/05 主分类号 H01L21/461
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