| 摘要 |
In a method for manufacturing a semiconductor device comprising an n-type transistor (Q1) that has a source electrode (4ns), a drain electrode (4d), an oxide semiconductor film (5), and a gate electrode (2), and that is formed on a substrate (1), and a p-type transistor (Q2) that has a source electrode (4ps), a drain electrode, an organic semiconductor film (7), and a gate electrode, and that is formed on the substrate, the gate electrode is formed on the substrate, the source electrode and the drain electrode are formed, the oxide semiconductor film is formed of an oxide semiconductor material; and the gate electrode is formed on the substrate, the source electrode and the drain electrode are formed, and the organic semiconductor film is formed of an organic semiconductor material. |
