| 摘要 |
PURPOSE: A fabrication method for a flat panel display is provided to reduce failure rate without the degradation of yield by doping poly-crystal silicon as the first electrode of a capacitor without an additional mask. CONSTITUTION: A substrate(100) comprises a first area(A) for forming a thin film transistor, a second area(B), and a third area(C) for forming capacitor. A polycrystalline silicon layer(110) and a photoresist layer are formed on the substrate. The polycrystalline silicon layer is patterned and a semiconductor layer(110a) is formed on the first area of the substrate. The first electrode(110b) of the capacitor is formed on the second area of the substrate. A halftone mask(200) comprises a light shielding area(210), a semi-shield area(220), and an optical transmission area(230).
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