Photo-electronic device comprising a vertical p-n or p-i-n junction and manufacturing method thereof

摘要

A method is provided for manufacturing a photo-electronic device comprising a vertical p-n or p-i-n junction (22), the junction (22) comprising p-and n-regions. The method comprises the steps of creating the vertical p-n or p-i-n junction (22) with the p- and n-regions disposed laterally over the substrate such that the junction is in a plane perpendicular to the plane of the substrate. The photo-electronic device is formed in a semiconductor water. In another embodiment, the photo-electronic device is formed on a substrate. A roughened surface of an interface between an electrode and the p- or n- region (2,36) and/or a roughened surface of the junction (22) increases the chance of capturing the electrode and hole pairs, gives higher electric field and increased surface of the junction (22).