| 摘要 |
<p>A method of producing a semiconductor device is provided, the semiconductor device 50 including a substrate 30, a semiconductor layer 36, 38, and at least one metallization layer 52, 70 adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.</p> |
