PURPOSE: A III-nitride semiconductor light emitting device is provided to increase light extraction efficiency by making the side of the transmittance electrode inclined. CONSTITUTION: In a III-nitride semiconductor light emitting device, a buffer(20) is formed on a substrate(10). An n-type nitride semiconductor layer(30) is formed on the buffer. An active layer(40) is formed on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(50) is formed on the active layer. A transmittance electrode(60) including a top side and a bottom side is formed on a p-type nitride semiconductor layer.
申请公布号
KR20110040350(A)
申请公布日期
2011.04.20
申请号
KR20090097575
申请日期
2009.10.14
申请人
EPIVALLEY CO., LTD.
发明人
KIM, CHANG TAE;KIM, HYUN SUK;NAM, GI YEON;LEE, TAE HEE;AN, HYUN SU;KIM, JONG HYOUK