发明名称 Process for fabrication of patterns on a diamond surface
摘要 The invention provides a system and process of patterning structures on a surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to an oxygen plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.
申请公布号 EP2310911(A1) 申请公布日期 2011.04.20
申请号 EP20090793879 申请日期 2009.07.03
申请人 THE PROVOST, FELLOWS AND SCHOLARS OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN 发明人 CROSS, GRAHAM L. W.;MCKENZIE, WARREN;PETHICA, JOHN B.
分类号 G03F7/11;B81C1/00;B82Y10/00;B82Y40/00;G03F7/00;H01L21/033 主分类号 G03F7/11
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