| 摘要 |
<p>A light emitting device according to the embodiment includes a first conductive semiconductor layer; a second conductive semiconductor layer; and an active layer including first and second active layers between the first and second conductive semiconductor layers. The first active layer emits light having a first wavelength band of 440nm to 500nm, and the second active layer emits light having a second wavelength band, which is shorter than the first wavelength band.</p> |
