| 发明名称 |
Transistors with fluorine treatment |
| 摘要 |
A high electron mobility transistor (HEMT), comprises a buffer layer (16); a barrier layer (18) on said buffer layer; a two dimensional electron gas (2DEG) (17) at the interface between said buffer layer and said barrier layer; and a negative ion region (56) in said barrier layer.
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| 申请公布号 |
EP2312634(A2) |
申请公布日期 |
2011.04.20 |
| 申请号 |
EP20110153385 |
申请日期 |
2006.07.07 |
| 申请人 |
CREE, INC. |
发明人 |
WU, YIFENG;MOORE, MARCIA;PARIKH, PRIMIT;WISLEDER, TIM |
| 分类号 |
H01L29/778;H01L21/338;H01L29/20;H01L29/207;H01L29/40 |
主分类号 |
H01L29/778 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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