| 摘要 |
A method for manufacturing a semiconductor device according to the present invention includes: an electrode formation step of forming an electrode on one surface of a semiconductor substrate; a through hole formation step of forming a through hole in the thickness direction of the semiconductor substrate starting from a position on the other surface of the semiconductor substrate corresponding to the position of the electrode formed on the one surface of the substrate; a first insulating layer formation step of forming a first insulating layer on at least an inner circumferential surface, a periphery of an opening, and a bottom surface of the through hole; a modifying step of reforming a first portion of the first insulating layer formed on the bottom surface of the through hole to form a ; a modified region removal step of removing the modified region to expose the electrode inside the through hole; and a conductive layer formation step of forming a conductive layer on the electrode exposed inside the through hole and on the first insulating layer such that the conductive layer is electrically connected with the electrode. FIG. 3A .
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